SPU30P06P
MOSFET P-CH 60V 30A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® P-Channel Power MOSFET, part number SPU30P06P. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 30A at 25°C. The SPU30P06P offers a maximum on-resistance (Rds On) of 75mOhm at 21.5A and 10V gate-source voltage. With a total power dissipation of 125W (Tc), this through-hole component is housed in a TO-251-3 (IPAK) package. Key electrical parameters include a gate charge (Qg) of 48 nC at 10V and input capacitance (Ciss) of 1535 pF at 25V Vds. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in industrial automation and power control systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 21.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.7mA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1535 pF @ 25 V |
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