SPU30N03S2L-10
MOSFET N-CH 30V 30A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPU30N03S2L-10 is an N-channel Power MOSFET designed for high-efficiency power conversion. This component features a 30V drain-source voltage and a continuous drain current of 30A at 25°C case temperature, with a maximum power dissipation of 82W. The SPU30N03S2L-10 offers a low on-resistance of 10mOhm at 30A and 10V gate-source voltage, minimizing conduction losses. Its gate charge is 39.4 nC at 10V, and input capacitance is 1460 pF at 25V. The device operates with a gate-source voltage range of ±20V and a threshold voltage of 2V at 50µA. Packaged in a TO-251-3 Short Leads (IPAK, TO-251AA) through-hole configuration, this MOSFET is suitable for applications in automotive and industrial power management systems requiring robust performance and thermal efficiency.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 82W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Supplier Device Package | P-TO251-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 39.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 25 V |
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