SPU18P06P
MOSFET P-CH 60V 18.6A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SIPMOS® SPU18P06P is a P-channel power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 18.6 A at 25°C (Tc). The SPU18P06P offers a low on-resistance of 130 mOhm maximum at 13.2 A and 10 V gate drive. Key characteristics include a gate charge of 33 nC maximum at 10 V and an input capacitance (Ciss) of 860 pF maximum at 25 V. The SPU18P06P is housed in a TO-251-3 Short Leads (IPAK) package, facilitating through-hole mounting. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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