SPU11N10
MOSFET N-CH 100V 10.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPU11N10 is an N-Channel Power MOSFET from the SIPMOS® series, packaged in a TO-251-3 (IPAK) configuration. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) capability of 10.5A at 25°C, with a maximum power dissipation of 50W (Tc). The on-resistance (Rds On) is specified at 170mOhm maximum at 7.8A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 18.3 nC (max) at 10V and input capacitance (Ciss) of 400 pF (max) at 25V. Designed for through-hole mounting, this MOSFET operates within a temperature range of -55°C to 175°C (TJ). The SPU11N10 is utilized in various industrial applications, including power supplies and motor control systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 21µA |
| Supplier Device Package | P-TO251-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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