SPU09P06PL
MOSFET P-CH 60V 9.7A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPU09P06PL is a P-Channel SIPMOS® MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 9.7 A at 25°C, with a maximum power dissipation of 42 W (Tc). The Rds On is specified at a maximum of 250 mOhm at 6.8 A and 10 V gate-source voltage. Gate drive requirements range from 4.5 V to 10 V. Key parameters include a gate charge (Qg) of 21 nC at 10 V and an input capacitance (Ciss) of 450 pF at 25 V. The SPU09P06PL is housed in a TO-251-3 Short Leads (IPAK) package, suitable for through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in various industrial sectors including automotive, consumer electronics, and power supply designs.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 6.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | P-TO251-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
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