SPU08P06P
MOSFET P-CH 60V 8.83A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the SPU08P06P, a P-Channel SIPMOS® power MOSFET. This device features a 60V drain-source voltage (Vdss) and supports a continuous drain current of 8.83A at 25°C (Ta). With a maximum power dissipation of 42W (Tc), it is suitable for demanding applications. The on-resistance (Rds On) is specified at 300mOhm maximum at 6.2A and 10V Vgs. Key characteristics include a gate charge of 13nC (max) at 10V and an input capacitance of 420pF (max) at 25V. The SPU08P06P utilizes through-hole mounting and is provided in a TO-251-3 package, also known as IPAK or TO-251AA. This component is commonly found in automotive and industrial power management systems.
Additional Information
Series: SIPMOS®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.83A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 6.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO251-3 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
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