SPU07N60S5
MOSFET N-CH 600V 7.3A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPU07N60S5 is an N-Channel CoolMOS™ Power Transistor designed for demanding applications. This device features a 600 V drain-source breakdown voltage and a continuous drain current capability of 7.3 A at a case temperature of 25°C. With a maximum on-resistance of 600 mO at 4.6 A and 10 V gate drive, it offers efficient power switching. The SPU07N60S5 is housed in a PG-TO251-3-21 (IPAK) package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 35 nC at 10 V and an input capacitance (Ciss) of 970 pF at 25 V. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 83 W (Tc). This component is utilized in power supply units, lighting, and industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 350µA |
| Supplier Device Package | PG-TO251-3-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 25 V |
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