SPU07N60C3BKMA1
MOSFET N-CH 650V 7.3A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPU07N60C3BKMA1 is a 650 V N-Channel CoolMOS™ Power MOSFET. This component features a high breakdown voltage and a low on-resistance of 600 mOhm at 4.6 A and 10 V Vgs. Designed for efficient power switching, it offers a continuous drain current of 7.3 A (Tc) and a maximum power dissipation of 83 W (Tc). The device has a gate charge of 27 nC @ 10 V and input capacitance of 790 pF @ 25 V. It is supplied in a PG-TO251-3-21 package for through-hole mounting. This MOSFET is suitable for applications in power supplies and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 350µA |
| Supplier Device Package | PG-TO251-3-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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