SPU04N60S5BKMA1
MOSFET N-CH 600V 4.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ SPU04N60S5BKMA1 is a 600V N-channel power MOSFET. This component features a continuous drain current (Id) of 4.5A (Tc) and a maximum power dissipation of 50W (Tc). The Rds On is specified at 950mOhm maximum at 2.8A and 10V. Key parameters include a Vgs(th) of 5.5V (max) at 200µA and a gate charge (Qg) of 22.9 nC (max) at 10V. Input capacitance (Ciss) is 580 pF (max) at 25V. The device operates within a temperature range of -55°C to 150°C (TJ). Packaged in a TO-251-3 Short Leads (IPAK) configuration, it is suitable for applications in power supplies and lighting.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 200µA |
| Supplier Device Package | PG-TO251-3-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 25 V |
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