SPU04N60C3BKMA1
MOSFET N-CH 650V 4.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the SPU04N60C3BKMA1, an N-Channel CoolMOS™ Power MOSFET. This component features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 4.5A at 25°C (Tc), with a maximum power dissipation of 50W (Tc). The SPU04N60C3BKMA1 offers a low on-resistance (Rds On) of 950mOhm at 2.8A and 10V gate drive voltage. Key parameters include a maximum gate charge (Qg) of 25 nC and an input capacitance (Ciss) of 490 pF. It is housed in a PG-TO251-3-21 package, commonly known as TO-251-3 Short Leads or IPAK, suitable for through-hole mounting. This device operates across a temperature range of -55°C to 150°C (TJ). The SPU04N60C3BKMA1 is utilized in power supply units, lighting, and industrial applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 200µA |
| Supplier Device Package | PG-TO251-3-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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