SPU03N60S5BKMA1
MOSFET N-CH 600V 3.2A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPU03N60S5BKMA1 is a 600V N-Channel power MOSFET designed for high-efficiency switching applications. This device features a low on-resistance of 1.4 Ohm maximum at 2A, 10V Vgs, and a continuous drain current capability of 3.2A at 25°C. With a maximum power dissipation of 38W, it is suitable for demanding power conversion tasks. The SPU03N60S5BKMA1 is housed in a TO-251-3 Short Leads (IPAK) package, facilitating through-hole mounting. Key electrical parameters include a gate charge of 16 nC at 10V and an input capacitance of 420 pF at 25V. This component finds application in power supplies, industrial automation, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 135µA |
| Supplier Device Package | PG-TO251-3-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
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