SPU01N60C3BKMA1
MOSFET N-CH 650V 800MA TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPU01N60C3BKMA1 is an N-channel power MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 800mA at 25°C (Tc). The Rds On is specified at a maximum of 6 Ohms at 500mA and 10V gate-source voltage. With a maximum power dissipation of 11W (Tc), it utilizes a PG-TO251-3-21 package for through-hole mounting. Key parameters include a gate charge (Qg) of 5 nC at 10V and an input capacitance (Ciss) of 100 pF. The operating junction temperature range is -55°C to 150°C. This MOSFET is suitable for use in power factor correction, switch mode power supplies, and lighting applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 11W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | PG-TO251-3-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
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