SPS04N60C3BKMA1
MOSFET N-CH 650V 4.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPS04N60C3BKMA1 is a 650 V N-Channel CoolMOS™ Power Transistor. This device features a 4.5 A continuous drain current (Tc) and a maximum power dissipation of 50 W (Tc). The Rds(on) is specified at 950 mOhm maximum at 2.8 A and 10 V. Key parameters include a gate charge of 25 nC (max) at 10 V and an input capacitance (Ciss) of 490 pF (max) at 25 V. The SPS04N60C3BKMA1 is housed in a TO-251-3 (IPAK) package with through-hole mounting. This component is suitable for applications in power supplies and industrial automation. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 200µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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