SPS03N60C3AKMA1
MOSFET N-CH 650V 3.2A TO251-3-11Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPS03N60C3AKMA1. This 650V device offers a continuous drain current of 3.2A at 25°C (Tc) and a maximum power dissipation of 38W (Tc). Featuring an Rds(on) of 1.4 Ohm at 2A and 10V, this N-Channel MOSFET is housed in a TO-251-3 Stub Leads, IPAK package. Key parameters include a gate charge of 17 nC at 10V and an input capacitance of 400 pF at 25V. It supports a gate-source voltage range of ±20V and a threshold voltage of 3.9V at 135µA. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supply units and industrial power systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 135µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |