SPS03N60C3
MOSFET N-CH 600V 3.2A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPS03N60C3 is a 600V N-Channel CoolMOS™ Power MOSFET. This device features a low Rds(on) of 1.4 Ohm maximum at 2A, 10V, and a continuous drain current of 3.2A at 25°C. With a maximum power dissipation of 38W, it is suitable for applications requiring high voltage and efficient switching. The input capacitance (Ciss) is 400 pF maximum at 25V, and the gate charge (Qg) is 17 nC maximum at 10V. The SPS03N60C3 is housed in a PG-TO251-3-11 (IPAK) package with through-hole mounting. Operating temperature range is from -55°C to 150°C. This component is commonly utilized in industrial power supplies, lighting, and motor control applications.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 135µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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