SPS02N60C3
MOSFET N-CH 650V 1.8A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPS02N60C3 is an N-channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) capability of 1.8A (Tc) at 25°C. The device offers a maximum on-resistance (Rds On) of 3 Ohm at 1.1A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 12.5 nC (Max) at 10V and an input capacitance (Ciss) of 200 pF (Max) at 25V. The SPS02N60C3 is housed in a PG-TO251-3-11 package, suitable for through-hole mounting. With a maximum power dissipation of 25W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is engineered for reliability in power supply and industrial automation sectors.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 80µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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