SPS01N60C3
MOSFET N-CH 650V 800MA TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPS01N60C3 is a 650 V N-Channel Power MOSFET designed for high-efficiency applications. This component features a low on-resistance of 6 Ohms maximum at 500 mA, 10 V, and a gate charge of 5 nC maximum at 10 V. With a continuous drain current of 800 mA at 25°C and a maximum power dissipation of 11 W, it is suitable for various power conversion topologies. The device is housed in a TO-251-3 Stub Leads, IPAK package, facilitating through-hole mounting. Key parameters include a drain-to-source voltage (Vdss) of 650 V, a gate-source voltage (Vgs) range of ±20 V, and a threshold voltage (Vgs(th)) of 3.9 V maximum at 250 µA. This MOSFET is utilized in industries such as consumer electronics, industrial automation, and lighting.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 11W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
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