SPP80P06PBKSA1
MOSFET P-CH 60V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP80P06PBKSA1 is a P-channel SIPMOS® power MOSFET designed for high-current applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 340W (Tc). The on-resistance (Rds On) is a maximum of 23mOhm at 64A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 173 nC at 10V and input capacitance (Ciss) of 5033 pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO220-3 package, suitable for through-hole mounting. This MOSFET is utilized in various industrial sectors, including power supply, motor control, and automotive applications.
Additional Information
Series: SIPMOS®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 64A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 340W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 5.5mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 173 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5033 pF @ 25 V |
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