SPP80N06S2L-11
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPP80N06S2L-11 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 158W (Tc). The device exhibits a low on-resistance (Rds On) of 11mOhm at 40A and 10V, achieved through advanced MOSFET technology. Key electrical characteristics include a Gate Charge (Qg) of 80 nC (Max) at 10V and an input capacitance (Ciss) of 2650 pF (Max) at 25V. The SPP80N06S2L-11 supports drive voltages ranging from 4.5V to 10V, with a maximum Gate-Source Voltage (Vgs) of ±20V. Its threshold voltage (Vgs(th)) is 2V (Max) at 93µA. Packaged in a PG-TO220-3-1, this through-hole component is rated for operation across a wide temperature range of -55°C to 175°C (TJ). It is commonly utilized in automotive, industrial, and power supply sectors.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 93µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2650 pF @ 25 V |
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