SPP80N06S2L-09
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPP80N06S2L-09 is an N-channel Power MOSFET featuring a 55V drain-source voltage. This component offers a continuous drain current handling capability of 80A at 25°C (Tc) and a maximum power dissipation of 190W (Tc). The low on-resistance is specified at 8.5mOhm maximum at 52A and 10V Vgs. Key parameters include a gate charge of 105 nC (max) at 10V Vgs and input capacitance of 3480 pF (max) at 25V Vds. The device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a standard PG-TO220-3-1 package suitable for through-hole mounting. This MOSFET is utilized in applications such as power supplies, motor control, and automotive systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 52A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 125µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3480 pF @ 25 V |
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