SPP80N06S2L-07
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP80N06S2L-07 is a high-performance N-Channel Power MOSFET from the OptiMOS™ series. This component features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 80 A at 25°C, with a maximum power dissipation of 210 W. The SPP80N06S2L-07 boasts a low on-resistance (Rds On) of 7 mOhm at 60 A and 10 V, ensuring efficient power transfer. Its through-hole mounting design, within a PG-TO220-3-1 package, facilitates robust system integration. Key electrical characteristics include a gate charge (Qg) of 130 nC at 10 V and input capacitance (Ciss) of 4210 pF at 25 V. Operating across an extended temperature range of -55°C to 175°C, this MOSFET is suitable for demanding applications in automotive, industrial power control, and power supply sectors.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 150µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4210 pF @ 25 V |
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