SPP80N06S2L-06
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ SPP80N06S2L-06 is an N-channel Power MOSFET designed with advanced technology for high-efficiency power switching applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current capability of 80A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). The device exhibits a low on-resistance (Rds On) of 6.3mOhm maximum at 69A and 10V Vgs, achieved with a 10V gate drive. Key parameters include a gate charge (Qg) of 150 nC maximum at 10V Vgs and input capacitance (Ciss) of 5050 pF maximum at 25V Vds. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is housed in a PG-TO220-3-1 package suitable for through-hole mounting. Its robust design makes it suitable for demanding applications in automotive, industrial, and power supply sectors.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 69A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 180µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5050 pF @ 25 V |
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