SPP80N06S2L-05
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SPP80N06S2L-05 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a 55V drain-source voltage and a continuous drain current capability of 80A at 25°C with a maximum power dissipation of 300W. The low Rds(on) of 4.8mOhm at 80A and 10V gate-source voltage, combined with a gate charge of 230nC at 10V, makes it suitable for high-efficiency power switching applications. The input capacitance (Ciss) is 7530pF at 25V. This through-hole device is packaged in a TO-220-3 (PG-TO220-3-1) and operates across a temperature range of -55°C to 175°C. Key industries utilizing this component include automotive, industrial power supplies, and high-power motor control.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7530 pF @ 25 V |
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