SPP80N06S2-07
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPP80N06S2-07 is an N-channel Power MOSFET designed for high-efficiency power conversion. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C (Tc). The low on-resistance (Rds On) of 6.6mOhm at 68A and 10V gate-source voltage (Vgs) ensures minimal conduction losses. With a maximum power dissipation of 250W (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 4540 pF at 25V. The SPP80N06S2-07 utilizes advanced trench technology and is packaged in a standard PG-TO220-3-1 through-hole configuration. This device finds application in power supply units, automotive electronics, and industrial motor control systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 68A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 180µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4540 pF @ 25 V |
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