SPP80N06S08AKSA1
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® SPP80N06S08AKSA1 is an N-channel power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 300W (Tc). The SPP80N06S08AKSA1 exhibits a low on-resistance (Rds On) of 8mOhm at 80A and 10V, facilitated by its advanced MOSFET technology. Key parameters include a gate charge (Qg) of 187 nC at 10V and input capacitance (Ciss) of 3660 pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO220-3-1 package, suitable for through-hole mounting. This component is commonly utilized in automotive, industrial, and power supply applications demanding robust and efficient power switching.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 187 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3660 pF @ 25 V |
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