SPP80N04S2L-03
MOSFET N-CH 40V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPP80N04S2L-03 is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vds) of 40 V and a continuous drain current (Id) capability of 80 A at 25°C (Tc). With a maximum power dissipation of 300 W (Tc), it offers robust thermal performance. The device exhibits a low on-resistance (Rds On) of 3.4 mOhm at 80 A and 10 V gate-source voltage, ensuring minimal conduction losses. Key parameters include a gate charge (Qg) of 213 nC at 10 V and input capacitance (Ciss) of 7930 pF at 25 V. The SPP80N04S2L-03 is housed in a PG-TO220-3-1 package, suitable for through-hole mounting. This MOSFET is utilized in industries such as automotive, industrial power, and server power supplies.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 213 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7930 pF @ 25 V |
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