SPP80N04S2-H4
MOSFET N-CH 40V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPP80N04S2-H4 is a 40V N-Channel power MOSFET designed for high-current applications. This component features a low Rds(on) of 4mOhm at 80A and 10V Vgs, enabling efficient power switching. With a continuous drain current capability of 80A at 25°C and a maximum power dissipation of 300W (Tc), it is suitable for demanding thermal environments. The device operates with a gate-source voltage range of ±20V and a threshold voltage of 4V at 250µA. Key parameters include a gate charge of 148 nC at 10V and input capacitance of 5890 pF at 25V. The SPP80N04S2-H4 utilizes a through-hole PG-TO220-3-1 package, facilitating robust mounting. This MOSFET finds application in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 148 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 25 V |
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