SPP80N03S2L05AKSA1
MOSFET N-CH 30V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the SPP80N03S2L05AKSA1, an N-channel MOSFET from the OptiMOS™ series. This through-hole component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 167W at the same temperature. The device boasts a low on-resistance (Rds On) of 5.2mOhm at 55A and 10V, enabled by a gate drive voltage range of 4.5V to 10V. Key electrical characteristics include a maximum gate charge (Qg) of 89.7 nC and input capacitance (Ciss) of 3320 pF at 25V. Optimized for demanding applications, this MOSFET is suitable for power management in automotive, industrial, and consumer electronics sectors. The package type is PG-TO220-3-1.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 110µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 89.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3320 pF @ 25 V |
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