SPP80N03S2L04AKSA1
MOSFET N-CH 30V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPP80N03S2L04AKSA1 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 80A at 25°C (Tc), with a maximum power dissipation of 188W (Tc). The low on-resistance (Rds On) of 4.2mOhm at 80A and 10V Vgs facilitates reduced conduction losses. It operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2V at 130µA. Key electrical characteristics include a maximum gate charge (Qg) of 105 nC at 10V and input capacitance (Ciss) of 3900 pF at 25V. The device is housed in a PG-TO220-3-1 package, suitable for through-hole mounting, and is rated for operation across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial power control, and power supply systems where high current density and thermal performance are critical.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 25 V |
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