SPP80N03S2-03
MOSFET N-CH 30V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP80N03S2-03 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 300W (Tc). The Rds On is specified at a maximum of 3.4mOhm at 80A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 150 nC @ 10V and input capacitance (Ciss) of 7020 pF @ 25V. The device supports a gate-source voltage range of ±20V, with a threshold voltage (Vgs(th)) of 4V @ 250µA. Packaged in a PG-TO220-3-1 (TO-220-3) through-hole configuration, this MOSFET operates across a temperature range of -55°C to 175°C (TJ). It is commonly utilized in automotive, industrial, and power supply applications where high current handling and low on-resistance are critical.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7020 pF @ 25 V |
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