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SPP73N03S2L08XK

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SPP73N03S2L08XK

MOSFET N-CH 30V 73A TO220-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies SPP73N03S2L08XK is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 73A at 25°C. The low on-resistance is specified at 8.4mOhm maximum at 36A and 10V Vgs. Operating with a gate-source voltage range of ±20V, the device exhibits a gate charge (Qg) of 46.2 nC maximum at 10V and an input capacitance (Ciss) of 1710 pF maximum at 25V. The power dissipation (Pd) is 107W at 25°C case temperature. This through-hole component is supplied in a PG-TO220-3-1 package and is suitable for applications in automotive and industrial sectors. The operating temperature range is -55°C to 175°C.

Additional Information

Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C73A (Tc)
Rds On (Max) @ Id, Vgs8.4mOhm @ 36A, 10V
FET Feature-
Power Dissipation (Max)107W (Tc)
Vgs(th) (Max) @ Id2V @ 55µA
Supplier Device PackagePG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs46.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1710 pF @ 25 V

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