SPP70N10L
MOSFET N-CH 100V 70A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP70N10L is an N-Channel Power MOSFET from the SIPMOS® series, housed in a PG-TO220-3-1 package. This device features a Drain-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 70 A at 25°C (Tc). The on-state resistance (Rds On) is specified at a maximum of 16 mOhm at 50 A and 10 V gate drive. With a maximum power dissipation of 250 W (Tc), this MOSFET is suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 240 nC at 10 V and input capacitance (Ciss) of 4540 pF at 25 V. It operates across a temperature range of -55°C to 175°C (TJ). This component finds application in power supply units, industrial motor control, and automotive power systems.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 2mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4540 pF @ 25 V |
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