SPP47N10
MOSFET N-CH 100V 47A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP47N10 is an N-Channel SIPMOS® power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 47A at 25°C. The device exhibits a low on-resistance (Rds On) of 33mOhm at 33A and 10V Vgs, with a maximum power dissipation of 175W (Tc). Key parameters include a gate charge (Qg) of 105 nC at 10V and input capacitance (Ciss) of 2500 pF at 25V. The SPP47N10 is housed in a PG-TO220-3-1 package with through-hole mounting. Its operational temperature range is -55°C to 175°C. This MOSFET is suitable for use in industrial and automotive power management systems requiring robust switching characteristics.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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