SPP42N03S2L13
MOSFET N-CH 30V 42A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP42N03S2L13 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 42A at 25°C (Tc), with a maximum power dissipation of 83W (Tc). The device exhibits a low on-resistance (Rds On) of 12.9mOhm at 21A and 10V Vgs. It is offered in a PG-TO220-3-1 package for through-hole mounting. Key parameters include a maximum gate charge (Qg) of 30.5 nC at 10V Vgs and input capacitance (Ciss) of 1130 pF at 25V Vds. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive and industrial power management. Drive voltage ranges from 4.5V to 10V.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.9mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 37µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1130 pF @ 25 V |
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