SPP35N10
MOSFET N-CH 100V 35A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® SPP35N10 is an N-Channel Power MOSFET featuring a 100V drain-source voltage and a continuous drain current of 35A at 25°C (Tc). This device offers a low on-resistance (Rds On) of 44mOhm maximum at 26.4A and 10V Vgs. With a maximum power dissipation of 150W (Tc), it is suitable for demanding applications. The gate charge (Qg) is 65 nC maximum at 10V, and the input capacitance (Ciss) is 1570 pF maximum at 25V. The SPP35N10 utilizes Through Hole mounting in a PG-TO220-3-1 package, operating within a temperature range of -55°C to 175°C (TJ). This component is frequently employed in power supply units, motor control, and industrial automation systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 26.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 25 V |
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