SPP24N60CFDHKSA1
MOSFET N-CH 650V 21.7A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP24N60CFDHKSA1 is an N-channel Power MOSFET designed for high voltage applications. This component offers a Drain-to-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 21.7A at 25°C (Tc). The device features a low on-resistance (Rds On) of 185mOhm at 15.4A and 10V, contributing to efficient power handling with a maximum power dissipation of 240W (Tc). With a gate charge (Qg) of 143 nC at 10V and input capacitance (Ciss) of 3160 pF at 25V, it is suitable for demanding switching applications. The SPP24N60CFDHKSA1 is packaged in a PG-TO220-3-1 through-hole package, operating across a temperature range of -55°C to 150°C (TJ). This MOSFET finds application in power supply units, solar inverters, and industrial motor control systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 15.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 240W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1.2mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3160 pF @ 25 V |
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