SPP24N60C3HKSA1
MOSFET N-CH 650V 24.3A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP24N60C3HKSA1 is a 650V N-Channel Power MOSFET designed for high-performance applications. This device features a continuous drain current rating of 24.3A (Tc) and a maximum power dissipation of 240W (Tc). The Rds(on) is specified at 160mOhm maximum at 15.4A and 10V Vgs. Key parameters include a Vgs(th) maximum of 3.9V at 1.2mA, a gate charge (Qg) maximum of 135 nC at 10V, and an input capacitance (Ciss) maximum of 3000 pF at 25V. The MOSFET is housed in a PG-TO220-3-1 package, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This component is utilized in power supply units, server applications, and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 15.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 240W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 1.2mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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