SPP21N50C3XKSA1
MOSFET N-CH 500V 21A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP21N50C3XKSA1 is a 500V N-Channel Power MOSFET. This through-hole device features a continuous drain current of 21A (Tc) with a maximum power dissipation of 208W (Tc). The Rds(on) is specified at 190mOhm maximum at 13.1A and 10V drive voltage. Key parameters include a Vgs(th) of 3.9V (max) at 1mA, a gate charge (Qg) of 95 nC (max) at 10V, and an input capacitance (Ciss) of 2400 pF (max) at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is housed in a PG-TO220-3-1 package. Applications include power supplies, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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