SPP21N50C3HKSA1
MOSFET N-CH 560V 21A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP21N50C3HKSA1 is a high-voltage N-channel power MOSFET designed for demanding applications. It features a Drain-Source Voltage (Vdss) of 560V and a continuous drain current (Id) of 21A at 25°C. The device offers a low on-resistance of 190mOhm maximum at 13.1A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 95 nC maximum at 10V and an input capacitance (Ciss) of 2400 pF maximum at 25V. With a maximum power dissipation of 208W (Tc), this MOSFET is suitable for power factor correction (PFC), switch mode power supplies (SMPS), and industrial power applications. The component is housed in a PG-TO220-3-1 package for through-hole mounting and operates within a temperature range of -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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