SPP21N10
MOSFET N-CH 100V 21A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® SPP21N10 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 100V. This component offers a continuous Drain Current (Id) of 21A at 25°C and a maximum power dissipation of 90W at the same temperature. The Rds On is specified at a maximum of 80mOhm at 15A and 10V gate drive. Key parameters include input capacitance (Ciss) of 865pF at 25V and gate charge (Qg) of 38.4nC at 10V. The device operates over a temperature range of -55°C to 175°C (TJ) and is housed in a TO-220-3 package, suitable for through-hole mounting. This MOSFET is utilized in applications such as power supplies, motor control, and general-purpose switching.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 44µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 38.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 865 pF @ 25 V |
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