SPP20N60S5HKSA1
HIGH POWER_LEGACYManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPP20N60S5HKSA1, offers a 600 V drain-source voltage with a continuous drain current of 20A at 25°C (Tc). This device features a maximum on-resistance of 190mOhm at 13A and 10V, with a gate charge of 103 nC at 10V. The input capacitance (Ciss) is a maximum of 3000 pF at 25V. Designed with a PG-TO220-3-1 package for through-hole mounting, this MOSFET has a maximum power dissipation of 208W at 25°C (Tc). It operates across a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) range of ±20V, with a threshold voltage of 5.5V at 1mA. This component is utilized in applications such as power supplies, industrial automation, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 1mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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