SPP20N60S5
MOSFET N-CH 650V 20A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP20N60S5 is a 650 V N-channel power MOSFET in a PG-TO220-3-1 package. This device offers a continuous drain current of 20A (Tc) at 25°C and a maximum power dissipation of 208W (Tc). Key electrical characteristics include a low on-resistance of 190mOhm (Max) at 13A, 10V, and a gate charge (Qg) of 103 nC (Max) at 10V. The input capacitance (Ciss) is 3000 pF (Max) at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supplies, industrial automation, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 1mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 103 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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