SPP20N60CFDXKSA1
MOSFET N-CH 650V 20.7A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ SPP20N60CFDXKSA1 is a 650V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a continuous drain current capability of 20.7A (Tc) at 25°C and a maximum power dissipation of 208W (Tc). The SPP20N60CFDXKSA1 offers a low on-resistance of 220mOhm at 13.1A and 10V, facilitated by its advanced CoolMOS™ technology. Key parameters include a gate charge (Qg) of 124 nC @ 10 V and input capacitance (Ciss) of 2400 pF @ 25 V. The MOSFET is housed in a PG-TO220-3-1 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C. This component is widely utilized in industries such as industrial power supplies, lighting, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 13.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 124 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
