SPP20N60CFDHKSA1
MOSFET N-CH 650V 20.7A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP20N60CFDHKSA1 is an N-channel CoolMOS™ Power MOSFET designed for high-voltage switching applications. This device features a Drain-to-Source Voltage (Vdss) of 650 V and a continuous drain current (Id) of 20.7 A at 25°C (Tc). With a maximum power dissipation of 208 W (Tc), it offers a low on-resistance (Rds On) of 220 mOhm at 13.1 A and 10 V. Key parameters include a gate charge (Qg) of 124 nC at 10 V and input capacitance (Ciss) of 2400 pF at 25 V. The MOSFET is housed in a TO-220-3 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C. This component finds application in power supply units, solar inverters, and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 13.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 124 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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