SPP20N60C3HKSA1
MOSFET N-CH 600V 20.7A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP20N60C3HKSA1 is a high-performance N-channel power MOSFET designed for demanding applications. This device features a 600 V drain-source voltage (Vdss) and a continuous drain current of 20.7 A at 25°C (Tc), with a maximum power dissipation of 208 W (Tc). The ultra-low on-resistance (Rds On) is 190 mOhm at 13.1 A and 10 V gate-source voltage.
Key electrical characteristics include a maximum gate charge (Qg) of 114 nC at 10 V and an input capacitance (Ciss) of 2400 pF at 25 V. The MOSFET operates with a gate drive voltage of 10 V and has a maximum gate-source voltage (Vgs) of ±20 V. The threshold voltage (Vgs(th)) is 3.9 V at 1 mA.
Packaged in a TO-220-3 (PG-TO220-3-1) through-hole configuration, this component is suitable for industrial, server power, and renewable energy applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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