SPP16N50C3HKSA1
MOSFET N-CH 560V 16A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPP16N50C3HKSA1 is a high-performance N-channel power MOSFET designed for demanding applications. This device features a Vds of 560V and a continuous drain current (Id) of 16A at 25°C (Tc), with a maximum power dissipation of 160W (Tc). The Rds(on) is specified at a maximum of 280mOhm at 10A and 10V, indicating excellent conduction efficiency. The device is housed in a standard PG-TO220-3-1 package for through-hole mounting. Key parameters include a gate charge (Qg) of 66 nC at 10V and input capacitance (Ciss) of 1600 pF at 25V. This MOSFET technology is suitable for use in power supply units, industrial motor control, and lighting applications. It operates across a wide temperature range from -55°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 675µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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