SPP15P10PLGHKSA1
MOSFET P-CH 100V 15A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the SPP15P10PLGHKSA1, a P-Channel SIPMOS® MOSFET designed for demanding applications. This through-hole component features a drain-source voltage of 100V and a continuous drain current of 15A at 25°C, with a maximum power dissipation of 128W. Optimized for efficient switching, it offers a maximum Rds(on) of 200mOhm at 11.3A and 10V gate drive, with a gate threshold voltage of 2V at 1.54mA. The device exhibits typical input capacitance (Ciss) of 1490pF at 25V and a gate charge (Qg) of 62nC at 10V. Operating across a wide temperature range of -55°C to 175°C, this MOSFET is suitable for power management and switching circuits in industrial and automotive sectors. The PG-TO220-3 package ensures robust thermal performance.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 11.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1.54mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1490 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
