SPP15P10PHXKSA1
MOSFET P-CH 100V 15A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPP15P10PHXKSA1 is a P-Channel SIPMOS® power MOSFET. This through-hole component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 15 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 240 mOhm at 10.6 A and 10 V gate-source voltage. With a maximum power dissipation of 128 W (Tc), it is suitable for applications requiring robust power switching. The SPP15P10PHXKSA1 is designed with a gate charge (Qg) of 48 nC and input capacitance (Ciss) of 1280 pF. Key parameters include a gate-source threshold voltage (Vgs(th)) of 2.1 V and a maximum gate-source voltage (Vgs) of ±20 V. This component is typically found in power management, automotive, and industrial applications. It is supplied in a PG-TO220-3 package.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 10.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1.54mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 25 V |