SPP15P10PGHKSA1
MOSFET P-CH 100V 15A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' SPP15P10PGHKSA1 is a P-Channel SIPMOS® power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 15 A at 25°C (Tc), with a maximum power dissipation of 128 W (Tc). The Rds On is specified at a maximum of 240 mOhm at 10.6 A and 10 V gate drive. Key characteristics include a gate charge (Qg) of 48 nC and an input capacitance (Ciss) of 1280 pF, both at 10 V and 25 V respectively. The device operates within a temperature range of -55°C to 175°C (TJ). Packaged in a PG-TO220-3 configuration, this through-hole mounted MOSFET is suitable for use in power management, industrial controls, and automotive systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 10.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1.54mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 25 V |
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