SPP15P10P
MOSFET P-CH 100V 15A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies SPP15P10P is a P-Channel Power MOSFET from the SIPMOS® series, housed in a PG-TO220-3 package. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 15A at 25°C (Tc). With a maximum power dissipation of 128W (Tc), it is designed for demanding applications. Key specifications include Rds On (Max) of 240mOhm at 10.6A and 10V, and a Gate Charge (Qg) of 50 nC at 10V. Input capacitance (Ciss) is 1180 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive, industrial power control, and power management systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 10.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1.54mA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 25 V |
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